inchange semiconductor isc product specification isc n-channel mosfet transistor IRF740 description drain current ?i d = 10a@ t c =25 drain source voltage- : v dss = 400v(min) static drain-source on-resistance : r ds(on) = 0.55 (max) fast switching speed applications designed especially for high vo ltage,high speed applications, such as off-line switching power sup plies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 125 w t j max. operating junc tion temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc n-channel mosfet transistor IRF740 electrical characteristics (t =25 c ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 0.25ma 400 v v gs(th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 5a 0.55 i gss gate source leakage current v gs = 20v; v ds = 0 500 na i dss zero gate voltage drain current v ds = 400v; v gs = 0 250 ua v sd diode forward voltage i f = 10a; v gs = 0 2.2 v isc website www.iscsemi.cn
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